The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack

Min-Hung Lee, K. J. Chen

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Poly-Si MOSFETs using a gate stack composed of ultra-thin HfSiO x and TiN are shown, and they are compatible with a monolithic three-dimensional integrated circuit (3D-ICs) process with the highest thermal budget of 700 °C. The poly-Si MOSFETs were studied for fabrication process temperatures with parasitic resistance, effective gate length, and grain boundary trap density. The short-channel effect with V T (threshold voltage), subthreshold swing (SS), and drain-induced barrier lowering (DIBL) was also compared at 650 °C and 700 °C. For stress reliability of both hot carrier and PBTI, the short-channel devices showed more stability in V T than the long-channel devices due to less grain boundary scattering. This study promotes the ultra-thin high-K/metal gate poly-Si MOSFET as a candidate for future monolithic 3D-ICs and silicon-on-glass (SOG) applications.

    Original languageEnglish
    Pages (from-to)244-247
    Number of pages4
    JournalSolid-State Electronics
    Volume79
    DOIs
    Publication statusPublished - 2013 Jan 1

    Fingerprint

    Polysilicon
    field effect transistors
    Metals
    Fabrication
    fabrication
    Grain boundaries
    grain boundaries
    Monolithic integrated circuits
    metals
    Hot carriers
    Silicon
    Threshold voltage
    budgets
    threshold voltage
    integrated circuits
    traps
    Scattering
    Glass
    glass
    silicon

    Keywords

    • 3D-ICs
    • High-K
    • Poly-Si
    • Reliability

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack. / Lee, Min-Hung; Chen, K. J.

    In: Solid-State Electronics, Vol. 79, 01.01.2013, p. 244-247.

    Research output: Contribution to journalArticle

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