The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh*, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

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Engineering & Materials Science