The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

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Engineering & Materials Science