The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh; P. Y. Lu; Steve S. Chung; K. Y. Chang; C. H. Liu; J. C. Ke; C. W. Yang; C. T. Tsai

doi:10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh^*
, P. Y. Lu
, Steve S. Chung
, K. Y. Chang
, C. H. Liu
, J. C. Ke
, C. W. Yang
, C. T. Tsai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894389
Publication status	Published - 2014 Sept 8
Externally published	Yes
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 2014 Jun 9 → 2014 Jun 12

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	2014/06/09 → 2014/06/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2014.6894389

Cite this

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894389 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. / Hsieh, E. R.; Lu, P. Y.; Chung, Steve S. et al.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894389 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsieh, ER, Lu, PY, Chung, SS, Chang, KY, Liu, CH, Ke, JC, Yang, CW & Tsai, CT 2014, The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. in Digest of Technical Papers - Symposium on VLSI Technology., 6894389, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 2014/06/09. https://doi.org/10.1109/VLSIT.2014.6894389

Hsieh ER, Lu PY, Chung SS, Chang KY, Liu CH, Ke JC et al. The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894389. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894389

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abstract = "For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.",

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AB - For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

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The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

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