The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479933310
DOIs
Publication statusPublished - 2014 Sep 8
Externally publishedYes
Event34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States
Duration: 2014 Jun 92014 Jun 12

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference34th Symposium on VLSI Technology, VLSIT 2014
CountryUnited States
CityHonolulu
Period14/6/914/6/12

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. In Digest of Technical Papers - Symposium on VLSI Technology [6894389] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894389