The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan*, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

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