The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan; C. H. Liu; C. L. Lin; F. C. Mong; J. H. Huang

doi:10.1016/j.mee.2013.03.083

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy₂O₃/Si MIS nanolaminated structures

P. C. Juan^*, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Nano-film Dy₂O₃:Zr and Dy₂O₃ gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

Original language	English
Pages (from-to)	172-176
Number of pages	5
Journal	Microelectronic Engineering
Volume	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.083
Publication status	Published - 2013

Keywords

Flatband voltage shift (ΔV)
X-ray diffraction (XRD)
X-ray photoelectron spectroscopy (XPS)
ZrN capping layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2013.03.083

Cite this

@article{a84b2439cdb44922a0b6929a111c5416,

title = "The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures",

abstract = "Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.",

keywords = "Flatband voltage shift (ΔV), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ZrN capping layer",

author = "Juan, {P. C.} and Liu, {C. H.} and Lin, {C. L.} and Mong, {F. C.} and Huang, {J. H.}",

note = "Funding Information: The authors would like to thank the National Science Council, Taiwan, Republic of China for supporting this work under Contract No. NSC 99-2221-E-131-022-MY2. ",

year = "2013",

doi = "10.1016/j.mee.2013.03.083",

language = "English",

volume = "109",

pages = "172--176",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

AU - Juan, P. C.

AU - Liu, C. H.

AU - Lin, C. L.

AU - Mong, F. C.

AU - Huang, J. H.

N1 - Funding Information: The authors would like to thank the National Science Council, Taiwan, Republic of China for supporting this work under Contract No. NSC 99-2221-E-131-022-MY2.

PY - 2013

Y1 - 2013

N2 - Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

AB - Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

KW - Flatband voltage shift (ΔV)

KW - X-ray diffraction (XRD)

KW - X-ray photoelectron spectroscopy (XPS)

KW - ZrN capping layer

UR - http://www.scopus.com/inward/record.url?scp=84876712134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876712134&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2013.03.083

DO - 10.1016/j.mee.2013.03.083

M3 - Article

AN - SCOPUS:84876712134

SN - 0167-9317

VL - 109

SP - 172

EP - 176

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -