The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

Original languageEnglish
Pages (from-to)172-176
Number of pages5
JournalMicroelectronic Engineering
Volume109
DOIs
Publication statusPublished - 2013 Apr 30

Keywords

  • Flatband voltage shift (ΔV)
  • X-ray diffraction (XRD)
  • X-ray photoelectron spectroscopy (XPS)
  • ZrN capping layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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