Abstract
In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.
| Original language | English |
|---|---|
| Title of host publication | Materials Science and Chemical Engineering |
| Pages | 422-425 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2013 Jul 8 |
| Event | 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore Duration: 2013 Feb 20 → 2013 Feb 21 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 699 |
| ISSN (Print) | 1022-6680 |
Other
| Other | 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 |
|---|---|
| Country | Singapore |
| Period | 13/2/20 → 13/2/21 |
Fingerprint
Keywords
- Leakage current
- Stack structure
- Thin films
- YO
ASJC Scopus subject areas
- Engineering(all)
Cite this
The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. / Lin, K. C.; Chou, C. H.; Chen, J. Y.; Li, C. J.; Huang, J. Y.; Liu, Chuan-Hsi.
Materials Science and Chemical Engineering. 2013. p. 422-425 (Advanced Materials Research; Vol. 699).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The effect of ternary material (Zr, Y, and O) high-k gate dielectrics
AU - Lin, K. C.
AU - Chou, C. H.
AU - Chen, J. Y.
AU - Li, C. J.
AU - Huang, J. Y.
AU - Liu, Chuan-Hsi
PY - 2013/7/8
Y1 - 2013/7/8
N2 - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.
AB - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.
KW - Leakage current
KW - Stack structure
KW - Thin films
KW - YO
UR - http://www.scopus.com/inward/record.url?scp=84879661983&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879661983&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.699.422
DO - 10.4028/www.scientific.net/AMR.699.422
M3 - Conference contribution
AN - SCOPUS:84879661983
SN - 9783037856758
T3 - Advanced Materials Research
SP - 422
EP - 425
BT - Materials Science and Chemical Engineering
ER -