The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

K. C. Lin, C. H. Chou, J. Y. Chen, C. J. Li, J. Y. Huang, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Original languageEnglish
Title of host publicationMaterials Science and Chemical Engineering
Pages422-425
Number of pages4
DOIs
Publication statusPublished - 2013 Jul 8
Event2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore
Duration: 2013 Feb 202013 Feb 21

Publication series

NameAdvanced Materials Research
Volume699
ISSN (Print)1022-6680

Other

Other2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
CountrySingapore
Period13/2/2013/2/21

Fingerprint

Rapid thermal annealing
Gate dielectrics
Zirconium
Leakage currents
Sputtering
Electric properties
Crystallization
Surface roughness
Electrodes
Oxides
Oxygen

Keywords

  • Leakage current
  • Stack structure
  • Thin films
  • YO

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lin, K. C., Chou, C. H., Chen, J. Y., Li, C. J., Huang, J. Y., & Liu, C-H. (2013). The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. In Materials Science and Chemical Engineering (pp. 422-425). (Advanced Materials Research; Vol. 699). https://doi.org/10.4028/www.scientific.net/AMR.699.422

The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. / Lin, K. C.; Chou, C. H.; Chen, J. Y.; Li, C. J.; Huang, J. Y.; Liu, Chuan-Hsi.

Materials Science and Chemical Engineering. 2013. p. 422-425 (Advanced Materials Research; Vol. 699).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, KC, Chou, CH, Chen, JY, Li, CJ, Huang, JY & Liu, C-H 2013, The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. in Materials Science and Chemical Engineering. Advanced Materials Research, vol. 699, pp. 422-425, 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013, Singapore, 13/2/20. https://doi.org/10.4028/www.scientific.net/AMR.699.422
Lin KC, Chou CH, Chen JY, Li CJ, Huang JY, Liu C-H. The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. In Materials Science and Chemical Engineering. 2013. p. 422-425. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.699.422
Lin, K. C. ; Chou, C. H. ; Chen, J. Y. ; Li, C. J. ; Huang, J. Y. ; Liu, Chuan-Hsi. / The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. Materials Science and Chemical Engineering. 2013. pp. 422-425 (Advanced Materials Research).
@inproceedings{53b96f32ad4c4a78b6156aae3f102ee9,
title = "The effect of ternary material (Zr, Y, and O) high-k gate dielectrics",
abstract = "In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.",
keywords = "Leakage current, Stack structure, Thin films, YO",
author = "Lin, {K. C.} and Chou, {C. H.} and Chen, {J. Y.} and Li, {C. J.} and Huang, {J. Y.} and Chuan-Hsi Liu",
year = "2013",
month = "7",
day = "8",
doi = "10.4028/www.scientific.net/AMR.699.422",
language = "English",
isbn = "9783037856758",
series = "Advanced Materials Research",
pages = "422--425",
booktitle = "Materials Science and Chemical Engineering",

}

TY - GEN

T1 - The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

AU - Lin, K. C.

AU - Chou, C. H.

AU - Chen, J. Y.

AU - Li, C. J.

AU - Huang, J. Y.

AU - Liu, Chuan-Hsi

PY - 2013/7/8

Y1 - 2013/7/8

N2 - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

AB - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

KW - Leakage current

KW - Stack structure

KW - Thin films

KW - YO

UR - http://www.scopus.com/inward/record.url?scp=84879661983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879661983&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.699.422

DO - 10.4028/www.scientific.net/AMR.699.422

M3 - Conference contribution

AN - SCOPUS:84879661983

SN - 9783037856758

T3 - Advanced Materials Research

SP - 422

EP - 425

BT - Materials Science and Chemical Engineering

ER -