The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

K. C. Lin; C. H. Chou; J. Y. Chen; C. J. Li; J. Y. Huang; Chuan-Hsi Liu

doi:10.4028/www.scientific.net/AMR.699.422

The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

K. C. Lin, C. H. Chou, J. Y. Chen, C. J. Li, J. Y. Huang, Chuan-Hsi Liu

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this research, the Y₂O₃ layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y₂O₃/ Y₂O₃+Zr/p-Si and Al/ZrN/ Y₃2O₃+Zr/ Y₂O₃/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Original language	English
Title of host publication	Materials Science and Chemical Engineering
Pages	422-425
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.699.422
Publication status	Published - 2013 Jul 8
Event	2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore Duration: 2013 Feb 20 → 2013 Feb 21

Publication series

Name	Advanced Materials Research
Volume	699
ISSN (Print)	1022-6680

Other

Other	2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
Country	Singapore
Period	13/2/20 → 13/2/21

Keywords

Leakage current
Stack structure
Thin films
YO

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.4028/www.scientific.net/AMR.699.422

Fingerprint Dive into the research topics of 'The effect of ternary material (Zr, Y, and O) high-k gate dielectrics'. Together they form a unique fingerprint.

Cite this

Lin, K. C., Chou, C. H., Chen, J. Y., Li, C. J., Huang, J. Y., & Liu, C-H. (2013). The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. In Materials Science and Chemical Engineering (pp. 422-425). (Advanced Materials Research; Vol. 699). https://doi.org/10.4028/www.scientific.net/AMR.699.422

Lin, KC, Chou, CH, Chen, JY, Li, CJ, Huang, JY & Liu, C-H 2013, The effect of ternary material (Zr, Y, and O) high-k gate dielectrics. in Materials Science and Chemical Engineering. Advanced Materials Research, vol. 699, pp. 422-425, 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013, Singapore, 13/2/20. https://doi.org/10.4028/www.scientific.net/AMR.699.422

@inproceedings{53b96f32ad4c4a78b6156aae3f102ee9,

title = "The effect of ternary material (Zr, Y, and O) high-k gate dielectrics",

abstract = "In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.",

keywords = "Leakage current, Stack structure, Thin films, YO",

author = "Lin, {K. C.} and Chou, {C. H.} and Chen, {J. Y.} and Li, {C. J.} and Huang, {J. Y.} and Chuan-Hsi Liu",

year = "2013",

month = jul,

day = "8",

doi = "10.4028/www.scientific.net/AMR.699.422",

language = "English",

isbn = "9783037856758",

series = "Advanced Materials Research",

pages = "422--425",

booktitle = "Materials Science and Chemical Engineering",

note = "2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 ; Conference date: 20-02-2013 Through 21-02-2013",

}

TY - GEN

T1 - The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

AU - Lin, K. C.

AU - Chou, C. H.

AU - Chen, J. Y.

AU - Li, C. J.

AU - Huang, J. Y.

AU - Liu, Chuan-Hsi

PY - 2013/7/8

Y1 - 2013/7/8

N2 - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

AB - In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

KW - Leakage current

KW - Stack structure

KW - Thin films

KW - YO

UR - http://www.scopus.com/inward/record.url?scp=84879661983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879661983&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.699.422

DO - 10.4028/www.scientific.net/AMR.699.422

M3 - Conference contribution

AN - SCOPUS:84879661983

SN - 9783037856758

T3 - Advanced Materials Research

SP - 422

EP - 425

BT - Materials Science and Chemical Engineering

T2 - 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013

Y2 - 20 February 2013 through 21 February 2013

ER -