The effect of ternary material (Zr, Y, and O) high-k gate dielectrics

K. C. Lin, C. H. Chou, J. Y. Chen, C. J. Li, J. Y. Huang, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Original languageEnglish
Title of host publicationMaterials Science and Chemical Engineering
Pages422-425
Number of pages4
DOIs
Publication statusPublished - 2013 Jul 8
Event2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , Singapore
Duration: 2013 Feb 202013 Feb 21

Publication series

NameAdvanced Materials Research
Volume699
ISSN (Print)1022-6680

Other

Other2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
CountrySingapore
Period13/2/2013/2/21

Keywords

  • Leakage current
  • Stack structure
  • Thin films
  • YO

ASJC Scopus subject areas

  • Engineering(all)

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