The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng; C. K. Lo; San Yuan Chen; Y. D. Yao

doi:10.1016/j.jmmm.2006.01.173

The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng^*, C. K. Lo, San Yuan Chen, Y. D. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The thermal stability of a multilayer structure of protection layer/Co₉₀Fe₁₀/Os (d nm)/Os₂₀Mn₈₀ has been studied as functions of annealing temperature (T_an) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co₉₀Fe₁₀/Os₂₀Mn₈₀ interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

Original language	English
Pages (from-to)	e50-e52
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.173
Publication status	Published - 2006 Sept
Externally published	Yes

Keywords

CoFe/Os/IrMn
CoFe/Os/OsMn
Mn diffusion
Os interlayer
Thermal stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2006.01.173

Cite this

@article{d39f7b17a2f246eea91929bff00ecc89,

title = "The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films",

abstract = "The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.",

keywords = "CoFe/Os/IrMn, CoFe/Os/OsMn, Mn diffusion, Os interlayer, Thermal stability",

author = "Peng, {Tai Yen} and Lo, {C. K.} and Chen, {San Yuan} and Yao, {Y. D.}",

note = "Funding Information: This work was financial supported by ROC MOEA and NSC under the grant Nos. of A331XS3710 and NSC-94-2120-M-001-008, respectively. ",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.01.173",

language = "English",

volume = "304",

pages = "e50--e52",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

AU - Peng, Tai Yen

AU - Lo, C. K.

AU - Chen, San Yuan

AU - Yao, Y. D.

N1 - Funding Information: This work was financial supported by ROC MOEA and NSC under the grant Nos. of A331XS3710 and NSC-94-2120-M-001-008, respectively.

PY - 2006/9

Y1 - 2006/9

N2 - The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

AB - The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

KW - CoFe/Os/IrMn

KW - CoFe/Os/OsMn

KW - Mn diffusion

KW - Os interlayer

KW - Thermal stability

UR - http://www.scopus.com/inward/record.url?scp=33646865726&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646865726&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.01.173

DO - 10.1016/j.jmmm.2006.01.173

M3 - Article

AN - SCOPUS:33646865726

SN - 0304-8853

VL - 304

SP - e50-e52

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this