The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng, C. K. Lo, San Yuan Chen, Y. D. Yao

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Abstract

The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

Original languageEnglish
Pages (from-to)e50-e52
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

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Keywords

  • CoFe/Os/IrMn
  • CoFe/Os/OsMn
  • Mn diffusion
  • Os interlayer
  • Thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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