The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin; Kuo Dong Huang; Shu Fen Hu

doi:10.1016/j.sse.2007.02.043

The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin, Kuo Dong Huang^*, Shu Fen Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH₃ diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

Original language	English
Pages (from-to)	1056-1061
Number of pages	6
Journal	Solid-State Electronics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2007.02.043
Publication status	Published - 2007 Jul
Externally published	Yes

Keywords

Drain induced barrier lowing (DIBL)
Short-channel effect (SCE)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2007.02.043

Cite this

@article{7c7292e38c9d427ab0a19c4634fcea00,

title = "The effect of N-channel polysilicon thin-film transistors with body-block spacers",

abstract = "This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.",

keywords = "Drain induced barrier lowing (DIBL), Short-channel effect (SCE)",

author = "Lin, {Jyi Tsong} and Huang, {Kuo Dong} and Hu, {Shu Fen}",

note = "Funding Information: The authors thank the National Nano Device Laboratories (NDL) (Contract No. NDL-95S-C-121) for financially supporting this research. Professor Y.C. Chou and P.J. Yen are also appreciated for their assistance on SEM image collection. ",

year = "2007",

month = jul,

doi = "10.1016/j.sse.2007.02.043",

language = "English",

volume = "51",

pages = "1056--1061",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - The effect of N-channel polysilicon thin-film transistors with body-block spacers

AU - Lin, Jyi Tsong

AU - Huang, Kuo Dong

AU - Hu, Shu Fen

N1 - Funding Information: The authors thank the National Nano Device Laboratories (NDL) (Contract No. NDL-95S-C-121) for financially supporting this research. Professor Y.C. Chou and P.J. Yen are also appreciated for their assistance on SEM image collection.

PY - 2007/7

Y1 - 2007/7

N2 - This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

AB - This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

KW - Drain induced barrier lowing (DIBL)

KW - Short-channel effect (SCE)

UR - http://www.scopus.com/inward/record.url?scp=34447536172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34447536172&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.02.043

DO - 10.1016/j.sse.2007.02.043

M3 - Article

AN - SCOPUS:34447536172

SN - 0038-1101

VL - 51

SP - 1056

EP - 1061

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

The effect of N-channel polysilicon thin-film transistors with body-block spacers

Abstract

Keywords

ASJC Scopus subject areas

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