The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin, Kuo Dong Huang*, Shu Fen Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

Original languageEnglish
Pages (from-to)1056-1061
Number of pages6
JournalSolid-State Electronics
Issue number7
Publication statusPublished - 2007 Jul
Externally publishedYes


  • Drain induced barrier lowing (DIBL)
  • Short-channel effect (SCE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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