The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin, Kuo Dong Huang, Shu-Fen Hu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH3 diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

Original languageEnglish
Pages (from-to)1056-1061
Number of pages6
JournalSolid-State Electronics
Volume51
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

Fingerprint

Thin film transistors
Polysilicon
spacers
transistors
thin films
Electric breakdown
Thin films
output
electrical faults
implantation
saturation

Keywords

  • Drain induced barrier lowing (DIBL)
  • Short-channel effect (SCE)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The effect of N-channel polysilicon thin-film transistors with body-block spacers. / Lin, Jyi Tsong; Huang, Kuo Dong; Hu, Shu-Fen.

In: Solid-State Electronics, Vol. 51, No. 7, 01.07.2007, p. 1056-1061.

Research output: Contribution to journalArticle

Lin, Jyi Tsong ; Huang, Kuo Dong ; Hu, Shu-Fen. / The effect of N-channel polysilicon thin-film transistors with body-block spacers. In: Solid-State Electronics. 2007 ; Vol. 51, No. 7. pp. 1056-1061.
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