The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin; Kuo Dong Huang; Shu-Fen Hu

doi:10.1016/j.sse.2007.02.043

The effect of N-channel polysilicon thin-film transistors with body-block spacers

Jyi Tsong Lin, Kuo Dong Huang, Shu-Fen Hu

Department of Physics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This study investigates structural modifications of the conventional TFT, which is suffers from the short-channel effect in advanced applications. An ideal body-block poly-Si thin-film transistor is successfully fabricated for the first time at a level that achieves high performance characteristics. The output characteristics of the body-block TFT, for instance, the low output conductance in the saturation area and high breakdown voltage, achieve an outstanding improvements compared to a conventional TFT. The poly-Si thin-film treatments of the body-block TFT with NH₃ diffusion or body implantation, and their corresponding performance effects, have also been investigated and discussed in depth.

Original language	English
Pages (from-to)	1056-1061
Number of pages	6
Journal	Solid-State Electronics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2007.02.043
Publication status	Published - 2007 Jul 1

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Keywords

Drain induced barrier lowing (DIBL)
Short-channel effect (SCE)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Lin, J. T., Huang, K. D., & Hu, S-F. (2007). The effect of N-channel polysilicon thin-film transistors with body-block spacers. Solid-State Electronics, 51(7), 1056-1061. https://doi.org/10.1016/j.sse.2007.02.043

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Access to Document

10.1016/j.sse.2007.02.043