The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

Chuan Hsi Liu*, Pi Chun Juan, Yi Hsien Chou, Hung Wen Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

Original languageEnglish
Pages (from-to)2-5
Number of pages4
JournalMicroelectronic Engineering
Issue number1
Publication statusPublished - 2012 Jan


  • Flatband voltage shift
  • High-κ dielectrics
  • Interfacial layer
  • Thermal stability
  • XPS depth profile
  • ZrLaO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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