The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

Chuan Hsi Liu; Pi Chun Juan; Yi Hsien Chou; Hung Wen Hsu

doi:10.1016/j.mee.2011.08.003

The effect of lanthanum (La) incorporation in ultra-thin ZrO₂ high-κ gate dielectrics

Chuan Hsi Liu^*, Pi Chun Juan, Yi Hsien Chou, Hung Wen Hsu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO ₂ (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO₂ can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

Original language	English
Pages (from-to)	2-5
Number of pages	4
Journal	Microelectronic Engineering
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2011.08.003
Publication status	Published - 2012 Jan

Keywords

Flatband voltage shift
High-κ dielectrics
Interfacial layer
Thermal stability
XPS depth profile
ZrLaO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.08.003

Cite this

@article{3760e1f737c4485f802a201c5ee5000a,

title = "The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics",

abstract = "Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.",

keywords = "Flatband voltage shift, High-κ dielectrics, Interfacial layer, Thermal stability, XPS depth profile, ZrLaO",

author = "Liu, {Chuan Hsi} and Juan, {Pi Chun} and Chou, {Yi Hsien} and Hsu, {Hung Wen}",

note = "Funding Information: The authors would like to acknowledge the Ming Chi University of Technology and National Taiwan Normal University for providing the financial and administrative supports and environments to conduct this work.",

year = "2012",

month = jan,

doi = "10.1016/j.mee.2011.08.003",

language = "English",

volume = "89",

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journal = "Microelectronic Engineering",

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T1 - The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

AU - Liu, Chuan Hsi

AU - Juan, Pi Chun

AU - Chou, Yi Hsien

AU - Hsu, Hung Wen

N1 - Funding Information: The authors would like to acknowledge the Ming Chi University of Technology and National Taiwan Normal University for providing the financial and administrative supports and environments to conduct this work.

PY - 2012/1

Y1 - 2012/1

N2 - Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

AB - Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

KW - Flatband voltage shift

KW - High-κ dielectrics

KW - Interfacial layer

KW - Thermal stability

KW - XPS depth profile

KW - ZrLaO

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