The effect of a smart body tie on the bottom-gate thin film transistor

Jyi Tsong Lin; Kuo Dong Huang; Shu Fen Hu

doi:10.1016/j.sse.2007.11.009

The effect of a smart body tie on the bottom-gate thin film transistor

Jyi Tsong Lin
, Kuo Dong Huang^*
, Shu Fen Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.

Original language	English
Pages (from-to)	808-812
Number of pages	5
Journal	Solid-State Electronics
Volume	52
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2007.11.009
Publication status	Published - 2008 May
Externally published	Yes

Keywords

Drain induced barrier lowing (DIBL)
Floating body effect
Smart body tie

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2007.11.009

Cite this

@article{7add4e3519764c5fa9e5c4af2a892f4e,

title = "The effect of a smart body tie on the bottom-gate thin film transistor",

abstract = "This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70\% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.",

keywords = "Drain induced barrier lowing (DIBL), Floating body effect, Smart body tie",

author = "Lin, \{Jyi Tsong\} and Huang, \{Kuo Dong\} and Hu, \{Shu Fen\}",

year = "2008",

month = may,

doi = "10.1016/j.sse.2007.11.009",

language = "English",

volume = "52",

pages = "808--812",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "5",

}

TY - JOUR

T1 - The effect of a smart body tie on the bottom-gate thin film transistor

AU - Lin, Jyi Tsong

AU - Huang, Kuo Dong

AU - Hu, Shu Fen

PY - 2008/5

Y1 - 2008/5

N2 - This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.

AB - This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.

KW - Drain induced barrier lowing (DIBL)

KW - Floating body effect

KW - Smart body tie

UR - https://www.scopus.com/pages/publications/41449113213

UR - https://www.scopus.com/pages/publications/41449113213#tab=citedBy

U2 - 10.1016/j.sse.2007.11.009

DO - 10.1016/j.sse.2007.11.009

M3 - Article

AN - SCOPUS:41449113213

SN - 0038-1101

VL - 52

SP - 808

EP - 812

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

The effect of a smart body tie on the bottom-gate thin film transistor

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this