The effect of a smart body tie on the bottom-gate thin film transistor

Jyi Tsong Lin, Kuo Dong Huang, Shu-Fen Hu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.

Original languageEnglish
Pages (from-to)808-812
Number of pages5
JournalSolid-State Electronics
Volume52
Issue number5
DOIs
Publication statusPublished - 2008 May 1

Keywords

  • Drain induced barrier lowing (DIBL)
  • Floating body effect
  • Smart body tie

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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