The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators

M. H. Liao, C. C. Wu, W. J. Su, S. C. Chen, M. H. Lee

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Abstract

In addition to the traditional existed static model, the dynamic model is proposed to investigate the thickness ( d ) dependence of tribo-dielectric layer (TDL) with the device performance in the triboelectric nanogenerators (Tengs) in this work. With the involvement of one material parameter, i.e., electron-hole recombination rate ( r ) near the TDL in our developed dynamic model, the d dependence of TDL for the effective surface charge ( Q_s ) and output current ( I ) in the Tengs is derived. The maximum I ( I_text max ) with the optimized TDL thickness ( d_text max ) is further obtained with the consideration of different r. It can be found that the larger value of r in the material results in the smaller value of I_text max and the larger value of d_text max. At the same time, the theoretical dynamic model is compared with the experimental data. With the designed spin coating speed and time for the TDL deposition, the Tengs with different d is demonstrated and studied experimentally. The experimental data and the theoretical dynamic model agree very well with each other.

Original languageEnglish
Article number8818614
Pages (from-to)4478-4480
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume66
Issue number10
DOIs
Publication statusPublished - 2019 Oct

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Keywords

  • Dynamic model
  • recombination
  • triboelectric nanogenerators (Tengs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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