The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

C. W. Liu; M. H. Lee; C. Y. Chao; C. Y. Chen; C. C. Yang; Y. Chang

doi:10.1109/SMTW.1998.722653

The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

C. W. Liu^*, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.

Original language	English
Title of host publication	1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	61-70
Number of pages	10
ISBN (Print)	0780351797, 9780780351790
DOIs	https://doi.org/10.1109/SMTW.1998.722653
Publication status	Published - 1998
Externally published	Yes
Event	1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998 - Hsinchu, Taiwan Duration: 1998 Jun 16 → …

Publication series

Name	1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998

Conference

Conference	1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
Country/Territory	Taiwan
City	Hsinchu
Period	1998/06/16 → …

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering
Hardware and Architecture

Access to Document

10.1109/SMTW.1998.722653

Cite this

Liu, C. W., Lee, M. H., Chao, C. Y., Chen, C. Y., Yang, C. C., & Chang, Y. (1998). The design of rapid thermal process for large diameter applications [semiconductor wafer processing]. In 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998 (pp. 61-70). Article 722653 (1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMTW.1998.722653

The design of rapid thermal process for large diameter applications [semiconductor wafer processing]. / Liu, C. W.; Lee, M. H.; Chao, C. Y. et al.
1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 61-70 722653 (1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, CW, Lee, MH, Chao, CY, Chen, CY, Yang, CC & Chang, Y 1998, The design of rapid thermal process for large diameter applications [semiconductor wafer processing]. in 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998., 722653, 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998, Institute of Electrical and Electronics Engineers Inc., pp. 61-70, 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998, Hsinchu, Taiwan, 1998/06/16. https://doi.org/10.1109/SMTW.1998.722653

Liu CW, Lee MH, Chao CY, Chen CY, Yang CC, Chang Y. The design of rapid thermal process for large diameter applications [semiconductor wafer processing]. In 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 61-70. 722653. (1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998). doi: 10.1109/SMTW.1998.722653

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abstract = "In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.",

author = "Liu, {C. W.} and Lee, {M. H.} and Chao, {C. Y.} and Chen, {C. Y.} and Yang, {C. C.} and Y. Chang",

note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998 ; Conference date: 16-06-1998",

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doi = "10.1109/SMTW.1998.722653",

language = "English",

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AU - Chang, Y.

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AB - In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.

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The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

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