The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

C. W. Liu, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.

    Original languageEnglish
    Title of host publication1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages61-70
    Number of pages10
    ISBN (Print)0780351797, 9780780351790
    DOIs
    Publication statusPublished - 1998 Jan 1
    Event1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998 - Hsinchu, Taiwan
    Duration: 1998 Jun 16 → …

    Publication series

    Name1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998

    Conference

    Conference1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
    CountryTaiwan
    CityHsinchu
    Period1998/06/16 → …

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering
    • Hardware and Architecture

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