The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions

Steve S. Chung, E. R. Hsieh, Y. B. Zhao, J. W. Lee, M. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The strategy and solutions in the design of tunneling FET for low voltage/power applications will be addressed in this paper. First, the concept of a face-tunneling scheme to provide a sufficient improvement over the conventional point tunneling has been justified by an experiment. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, face-tunneling FET (f-TFET) can be enhanced in its Ion current. This work shows Ion of f-TFET with one-order magnitude Ion enhancement than that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control. This can be better improved by careful treatment of a special design epi-channel, Next, further improvement of the TFET performance has been proposed by a further design of an improved epitaxial SiGe-based channel structure. The design is based on a raised-drain structure with further improvement on the Ion current and much lower S. S. down to 28mV/dec.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538662342
DOIs
Publication statusPublished - 2018 Oct 9
Externally publishedYes
Event2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China
Duration: 2018 Jun 62018 Jun 8

Publication series

Name2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/TerritoryChina
CityShenzhen
Period2018/06/062018/06/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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