The strategy and solutions in the design of tunneling FET for low voltage/power applications will be addressed in this paper. First, the concept of a face-tunneling scheme to provide a sufficient improvement over the conventional point tunneling has been justified by an experiment. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, face-tunneling FET (f-TFET) can be enhanced in its Ion current. This work shows Ion of f-TFET with one-order magnitude Ion enhancement than that of point-TFET(control), and the longer the gate length is, the higher the Ion becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control. This can be better improved by careful treatment of a special design epi-channel, Next, further improvement of the TFET performance has been proposed by a further design of an improved epitaxial SiGe-based channel structure. The design is based on a raised-drain structure with further improvement on the Ion current and much lower S. S. down to 28mV/dec.