The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate

M. H. Lee; K. Y. Ho; P. C. Chen; C. C. Cheng; Y. H. Yeh

The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate

M. H. Lee^*, K. Y. Ho, P. C. Chen, C. C. Cheng, Y. H. Yeh

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

Original language	English
Pages (from-to)	439-442
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	2006
Publication status	Published - 2006
Externally published	Yes
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 2006 Aug 22 → 2006 Aug 25

ASJC Scopus subject areas

General Engineering

Cite this

@article{a98402e748f4496bacc23979886ed638,

title = "The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate",

abstract = "We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.",

author = "Lee, {M. H.} and Ho, {K. Y.} and Chen, {P. C.} and Cheng, {C. C.} and Yeh, {Y. H.}",

year = "2006",

language = "English",

volume = "2006",

pages = "439--442",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate

AU - Lee, M. H.

AU - Ho, K. Y.

AU - Chen, P. C.

AU - Cheng, C. C.

AU - Yeh, Y. H.

PY - 2006

Y1 - 2006

N2 - We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

AB - We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

UR - http://www.scopus.com/inward/record.url?scp=33846184134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846184134&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33846184134

SN - 1738-7558

VL - 2006

SP - 439

EP - 442

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate

Abstract

ASJC Scopus subject areas

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