The dependence of mechanical strain on a-Si: H TFTs and metal connection fabricated on flexible substrate

M. H. Lee, K. Y. Ho, P. C. Chen, C. C. Cheng, Y. H. Yeh

Research output: Contribution to journalArticle

Abstract

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

Original languageEnglish
Pages (from-to)439-442
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

Tensile strain
Substrates
Metals
Flexible displays
Dangling bonds
Threshold voltage
Polyimides
Wire
Degradation
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

The dependence of mechanical strain on a-Si : H TFTs and metal connection fabricated on flexible substrate. / Lee, M. H.; Ho, K. Y.; Chen, P. C.; Cheng, C. C.; Yeh, Y. H.

In: Proceedings of International Meeting on Information Display, Vol. 2006, 2006, p. 439-442.

Research output: Contribution to journalArticle

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