We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006|
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