The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

C. M. Yen, S. Y. Chang, K. C. Chen, Y. J. Feng, L. H. Chen, B. Z. Liao, M. H. Lee, S. C. Chen, M. H. Liao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

With the usage of gas ferrocene Fe(C5H5)2 as a reactant, which is different from the traditional thin Fe film, to grow the high-quality carbon nanotubes (CNTs) in the high aspect ratio (AR) trench structure, it has many advantages to be the through-silicon vias (TSVs) material for the three-dimensional (3-D) stacking technology. In this work, we successfully demonstrate the full process flow, including CNT growing, chemical-mechanical planarization (CMP), and wafer temporary bonding for CNTs as TSVs in the 3-D stacking connection. The flexibility for this demonstrated process flow makes the integration of real high dense devices and CNTs as TSVs for the 3-D connection more easily.

Original languageEnglish
Pages (from-to)1600-1603
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume69
Issue number3
DOIs
Publication statusPublished - 2022 Mar 1

Keywords

  • 3-D stacking technology
  • carbon nanotubes (CNTs)
  • ferrocene Fethrough-silicon vias (TSVs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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