The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Chin Lien*, Cho Fan Hsieh, Hung Sen Wu, Teng Chun Wu, Syu Jhih Wei, Yu Heng Chu, Ming Han Liao, Min Hung Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

Original languageEnglish
Article number8466023
Pages (from-to)4834-4838
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2018 Nov


  • Barium titanate (BaTiO BTO)
  • bismuth ferrite (BiFeO BFO)
  • metal-insulator-metal (MIM) capacitor
  • multilayer stack
  • rapid thermal anneal (RTA)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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