The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Chin Lien; Cho Fan Hsieh; Hung Sen Wu; Teng Chun Wu; Syu Jhih Wei; Yu Heng Chu; Ming Han Liao; Min Hung Lee

doi:10.1109/TED.2018.2868849

The demonstration of high-performance multilayer BaTiO₃/BiFeO₃ stack MIM capacitors

Chin Lien^*, Cho Fan Hsieh, Hung Sen Wu, Teng Chun Wu, Syu Jhih Wei, Yu Heng Chu, Ming Han Liao, Min Hung Lee

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Multilayer BaTiO₃/BiFeO₃ (BTO/BFO) stack structures were prepared on the Pt/TiO₂/SiO₂/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

Original language	English
Article number	8466023
Pages (from-to)	4834-4838
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/TED.2018.2868849
Publication status	Published - 2018 Nov

Keywords

Barium titanate (BaTiO BTO)
bismuth ferrite (BiFeO BFO)
metal-insulator-metal (MIM) capacitor
multilayer stack
rapid thermal anneal (RTA)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2018.2868849

Cite this

@article{c40a3dbfaa90400ea51d52a5de88ccb0,

title = "The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors",

abstract = "Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.",

keywords = "Barium titanate (BaTiO BTO), bismuth ferrite (BiFeO BFO), metal-insulator-metal (MIM) capacitor, multilayer stack, rapid thermal anneal (RTA)",

author = "Chin Lien and Hsieh, {Cho Fan} and Wu, {Hung Sen} and Wu, {Teng Chun} and Wei, {Syu Jhih} and Chu, {Yu Heng} and Liao, {Ming Han} and Lee, {Min Hung}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = nov,

doi = "10.1109/TED.2018.2868849",

language = "English",

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T1 - The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

AU - Lien, Chin

AU - Hsieh, Cho Fan

AU - Wu, Hung Sen

AU - Wu, Teng Chun

AU - Wei, Syu Jhih

AU - Chu, Yu Heng

AU - Liao, Ming Han

AU - Lee, Min Hung

PY - 2018/11

Y1 - 2018/11

N2 - Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

AB - Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

KW - Barium titanate (BaTiO BTO)

KW - bismuth ferrite (BiFeO BFO)

KW - metal-insulator-metal (MIM) capacitor

KW - multilayer stack

KW - rapid thermal anneal (RTA)

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