The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance

M. H. Liao, P. Y. Lu, W. J. Su, S. C. Chen, H. T. Hung, C. R. Kao, W. C. Pu, C. C.A. Chen, M. H. Lee

Research output: Contribution to journalArticle

Abstract

In this brief, the high-quality carbon nanotubes (CNTs) is grown by a chemical vapor deposition (CVD) method, and it is used as an ultrafine flip-chip interconnection material in the proposed 3-D integrated circuit (3DIC) system. We show a patterned growth of multiwalled CNTs on the substrate with prestructured bond pads including a complete metallization system for an electrical characterization. We succeeded in achieving reliable flip-chip connections between CNT-covered contact pads and metal pads during the room temperature bonding process. The goal is a reversible electrical and mechanical chip assembly with CNT bumps. Based on the current-voltage (I - V) measurements, the resistivity (ρ) of the grown CNTs is found to be close to ∼ 10-6 Ωm. With the proposed 3DIC process flow, the vertically electrical connection between two different Si substrates is demonstrated successfully. The connection resistance in the full 3-D system is very promising (∼ 2.43 Ω), compared with other's work (∼ 12 Ω). The different bonding materials (In versus Sn) and bonding times are also investigated systemically and further optimized. This brief provides a useful solution for the future electrical connection in the high-performance and high-dense 3-D integrated devices.

Original languageEnglish
Article number9042868
Pages (from-to)2205-2207
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume67
Issue number5
DOIs
Publication statusPublished - 2020 May

Keywords

  • 3-D integrated circuits (3DICs)
  • carbon nanotubes (CNTs)
  • electrical resistance
  • flip-chip bonding connections

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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