TY - GEN
T1 - The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs
AU - Lu, P. Y.
AU - Yen, C. M.
AU - Chang, S. Y.
AU - Feng, Y. J.
AU - Lien, C.
AU - Hu, C. W.
AU - Yao, C. W.
AU - Lee, M. H.
AU - Liao, M. H.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/12
Y1 - 2020/12/12
N2 - With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~10-6 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm-1K-1), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. on the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C5H5)2 reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.
AB - With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~10-6 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm-1K-1), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. on the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C5H5)2 reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.
UR - https://www.scopus.com/pages/publications/85102939120
UR - https://www.scopus.com/pages/publications/85102939120#tab=citedBy
U2 - 10.1109/IEDM13553.2020.9371949
DO - 10.1109/IEDM13553.2020.9371949
M3 - Conference contribution
AN - SCOPUS:85102939120
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 12.6.1-12.6.4
BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Y2 - 12 December 2020 through 18 December 2020
ER -