The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs

P. Y. Lu, C. M. Yen, S. Y. Chang, Y. J. Feng, C. Lien, C. W. Hu, C. W. Yao, M. H. Lee, M. H. Liao*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~10-6 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm-1K-1), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. on the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C5H5)2 reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages12.6.1-12.6.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 2020 Dec 12
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 2020 Dec 122020 Dec 18

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period2020/12/122020/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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