The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics

Min-Hung Lee, S. T. Chang, S. C. Weng, W. H. Liu, K. J. Chen, K. Y. Ho, M. H. Liao, J. J. Huang, G. R. Hu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    Original languageEnglish
    Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
    Pages956-959
    Number of pages4
    DOIs
    Publication statusPublished - 2009 Nov 12
    Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
    Duration: 2009 Apr 262009 Apr 30

    Publication series

    NameIEEE International Reliability Physics Symposium Proceedings
    ISSN (Print)1541-7026

    Other

    Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
    CountryCanada
    CityMontreal, QC
    Period2009/04/262009/04/30

    Keywords

    • A-Si:H
    • Flexible
    • Mechanical strain
    • Trap state

    ASJC Scopus subject areas

    • Engineering(all)

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