The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics

Min-Hung Lee, S. T. Chang, S. C. Weng, W. H. Liu, K. J. Chen, K. Y. Ho, M. H. Liao, J. J. Huang, G. R. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Original languageEnglish
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages956-959
Number of pages4
DOIs
Publication statusPublished - 2009 Nov 12
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 2009 Apr 262009 Apr 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period09/4/2609/4/30

Keywords

  • A-Si:H
  • Flexible
  • Mechanical strain
  • Trap state

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Lee, M-H., Chang, S. T., Weng, S. C., Liu, W. H., Chen, K. J., Ho, K. Y., Liao, M. H., Huang, J. J., & Hu, G. R. (2009). The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 956-959). [5173388] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173388