The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

Tsu Yi Fu; Chang Yu Kuo; Sung Lin Tsay

doi:10.1016/j.tsf.2007.02.079

The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

Tsu Yi Fu^*, Chang Yu Kuo, Sung Lin Tsay

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.

Original language	English
Pages (from-to)	8290-8292
Number of pages	3
Journal	Thin Solid Films
Volume	515
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2007.02.079
Publication status	Published - 2007 Aug 15

Keywords

Cobalt
Scanning tunnelling microscopy
Silicon
Surface thermodynamics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.02.079

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title = "The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures",

abstract = "The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.",

keywords = "Cobalt, Scanning tunnelling microscopy, Silicon, Surface thermodynamics",

author = "Fu, {Tsu Yi} and Kuo, {Chang Yu} and Tsay, {Sung Lin}",

note = "Funding Information: The research is supported by the National Science Council of ROC under grant no. NSC 94-2112-M-003-001.",

year = "2007",

month = aug,

day = "15",

doi = "10.1016/j.tsf.2007.02.079",

language = "English",

volume = "515",

pages = "8290--8292",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "22",

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TY - JOUR

T1 - The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

AU - Fu, Tsu Yi

AU - Kuo, Chang Yu

AU - Tsay, Sung Lin

N1 - Funding Information: The research is supported by the National Science Council of ROC under grant no. NSC 94-2112-M-003-001.

PY - 2007/8/15

Y1 - 2007/8/15

N2 - The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.

AB - The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.

KW - Cobalt

KW - Scanning tunnelling microscopy

KW - Silicon

KW - Surface thermodynamics

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DO - 10.1016/j.tsf.2007.02.079

M3 - Article

AN - SCOPUS:34547823918

SN - 0040-6090

VL - 515

SP - 8290

EP - 8292

JO - Thin Solid Films

JF - Thin Solid Films

IS - 22

ER -

The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

Abstract

Keywords

ASJC Scopus subject areas

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