The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

Tsu Yi Fu, Chang Yu Kuo, Sung Lin Tsay

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.

Original languageEnglish
Pages (from-to)8290-8292
Number of pages3
JournalThin Solid Films
Volume515
Issue number22
DOIs
Publication statusPublished - 2007 Aug 15

Keywords

  • Cobalt
  • Scanning tunnelling microscopy
  • Silicon
  • Surface thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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