@inproceedings{c5bbe211420b4f2895402121507b90f6,
title = "The analysis of channel stress induced by CESL in N-MOSFET",
abstract = "The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.",
keywords = "CESL stressor, Channel stress, Mobility",
author = "Twu, {M. J.} and Kao, {W. C.} and Lin, {K. C.} and Chen, {K. D.} and Kua, {Y. T.} and Liu, {C. H.}",
year = "2014",
doi = "10.4028/www.scientific.net/AMM.481.235",
language = "English",
isbn = "9783037859681",
series = "Applied Mechanics and Materials",
pages = "235--240",
booktitle = "Quantum, Nano, Micro Technologies and Applied Researches",
note = "2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 ; Conference date: 01-12-2013 Through 02-12-2013",
}