The analysis of channel stress induced by CESL in N-MOSFET

Ming-Jenq Twu, Wen-Chung Kao, K. C. Lin, K. D. Chen, Y. T. Kua, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

Original languageEnglish
Title of host publicationQuantum, Nano, Micro Technologies and Applied Researches
Pages235-240
Number of pages6
DOIs
Publication statusPublished - 2014 Jan 16
Event2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , Singapore
Duration: 2013 Dec 12013 Dec 2

Publication series

NameApplied Mechanics and Materials
Volume481
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
CountrySingapore
Period13/12/113/12/2

Keywords

  • CESL stressor
  • Channel stress
  • Mobility

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T., & Liu, C-H. (2014). The analysis of channel stress induced by CESL in N-MOSFET. In Quantum, Nano, Micro Technologies and Applied Researches (pp. 235-240). (Applied Mechanics and Materials; Vol. 481). https://doi.org/10.4028/www.scientific.net/AMM.481.235