The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Ming Han Liao; Hong Yi Huang; Fu An Tsai; Chih Chieh Chuang; Min Hsuan Hsu; Chang Chun Lee; Min Hung Lee; Chin Lien; Cho Fan Hsieh; Teng Chun Wu; Hung Sen Wu; Chun Wei Yao

doi:10.1016/j.vacuum.2016.07.024

The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Ming Han Liao^*, Hong Yi Huang, Fu An Tsai, Chih Chieh Chuang, Min Hsuan Hsu, Chang Chun Lee, Min Hung Lee, Chin Lien, Cho Fan Hsieh, Teng Chun Wu, Hung Sen Wu, Chun Wei Yao

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (J_g)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO₃ as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super J_g-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.

Original language	English
Pages (from-to)	63-65
Number of pages	3
Journal	Vacuum
Volume	140
DOIs	https://doi.org/10.1016/j.vacuum.2016.07.024
Publication status	Published - 2017 Jun 1

Keywords

FinFET
Ge
Magnetic gate stack
Negative capacitance effect

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2016.07.024

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@article{76405be3dfa74a2f826678c6d5cdc7e4,

title = "The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect",

abstract = "Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO3 as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super Jg-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.",

keywords = "FinFET, Ge, Magnetic gate stack, Negative capacitance effect",

author = "Liao, {Ming Han} and Huang, {Hong Yi} and Tsai, {Fu An} and Chuang, {Chih Chieh} and Hsu, {Min Hsuan} and Lee, {Chang Chun} and Lee, {Min Hung} and Chin Lien and Hsieh, {Cho Fan} and Wu, {Teng Chun} and Wu, {Hung Sen} and Yao, {Chun Wei}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2017",

month = jun,

day = "1",

doi = "10.1016/j.vacuum.2016.07.024",

language = "English",

volume = "140",

pages = "63--65",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

AU - Liao, Ming Han

AU - Huang, Hong Yi

AU - Tsai, Fu An

AU - Chuang, Chih Chieh

AU - Hsu, Min Hsuan

AU - Lee, Chang Chun

AU - Lee, Min Hung

AU - Lien, Chin

AU - Hsieh, Cho Fan

AU - Wu, Teng Chun

AU - Wu, Hung Sen

AU - Yao, Chun Wei

PY - 2017/6/1

Y1 - 2017/6/1

N2 - Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO3 as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super Jg-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.

AB - Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO3 as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super Jg-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.

KW - FinFET

KW - Ge

KW - Magnetic gate stack

KW - Negative capacitance effect

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JO - Vacuum

JF - Vacuum

ER -

The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Abstract

Keywords

ASJC Scopus subject areas

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