The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Ming Han Liao, Hong Yi Huang, Fu An Tsai, Chih Chieh Chuang, Min Hsuan Hsu, Chang Chun Lee, Min Hung Lee, Chin Lien, Cho Fan Hsieh, Teng Chun Wu, Hung Sen Wu, Chun Wei Yao

Research output: Contribution to journalArticle

Abstract

Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO3 as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super Jg-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.

Original languageEnglish
Pages (from-to)63-65
Number of pages3
JournalVacuum
Volume140
DOIs
Publication statusPublished - 2017 Jun 1

Keywords

  • FinFET
  • Ge
  • Magnetic gate stack
  • Negative capacitance effect

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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