TY - GEN
T1 - Test structures of LASCR device for RF ESD protection in nanoscale CMOS process
AU - Lin, Chun Yu
AU - Chang, Rong Kun
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/5/20
Y1 - 2016/5/20
N2 - The test structures of inductor-assisted silicon-controlled rectifier (LASCR) are investigated in this work to protect the radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages. Verified in silicon chip, the LASCR with the assistance of inductor can provide both good ESD robustness and RF performances. With the better performances, the LASCR is very suitable for gigahertz RF applications.
AB - The test structures of inductor-assisted silicon-controlled rectifier (LASCR) are investigated in this work to protect the radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages. Verified in silicon chip, the LASCR with the assistance of inductor can provide both good ESD robustness and RF performances. With the better performances, the LASCR is very suitable for gigahertz RF applications.
KW - CMOS
KW - electrostatic discharge (ESD) protection
KW - radio frequency (RF)
UR - http://www.scopus.com/inward/record.url?scp=84974539797&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84974539797&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2016.7476183
DO - 10.1109/ICMTS.2016.7476183
M3 - Conference contribution
AN - SCOPUS:84974539797
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 100
EP - 103
BT - 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
Y2 - 28 March 2016 through 31 March 2016
ER -