Test structures of LASCR device for RF ESD protection in nanoscale CMOS process

Chun-Yu Lin, Rong Kun Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The test structures of inductor-assisted silicon-controlled rectifier (LASCR) are investigated in this work to protect the radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages. Verified in silicon chip, the LASCR with the assistance of inductor can provide both good ESD robustness and RF performances. With the better performances, the LASCR is very suitable for gigahertz RF applications.

Original languageEnglish
Title of host publication2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages100-103
Number of pages4
ISBN (Electronic)9781467387934
DOIs
Publication statusPublished - 2016 May 20
Event29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan
Duration: 2016 Mar 282016 Mar 31

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2016-May

Other

Other29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
CountryJapan
CityYokohama
Period16/3/2816/3/31

Keywords

  • CMOS
  • electrostatic discharge (ESD) protection
  • radio frequency (RF)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lin, C-Y., & Chang, R. K. (2016). Test structures of LASCR device for RF ESD protection in nanoscale CMOS process. In 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings (pp. 100-103). [7476183] (IEEE International Conference on Microelectronic Test Structures; Vol. 2016-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2016.7476183