Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal

Hui Chuan Hung*, Chien Jang Wu, Shoou Jinn Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)


In this work, terahertz (THz) temperature-dependent properties of defect mode in a defective semiconductor-dielectric photonic crystal (SDPC) are theoretically investigated based on the calculated transmittance spectrum. Two different defective PCs, the symmetric structure of (Si/SiO2) NInSb(SiO2/Si)N and the asymmetric one of (Si/SiO2)NInSb(Si/SiO2)N, will be considered. With a strongly temperature-dependent permittivity in defect layer InSb, the defect mode can be thermally tuned, that is, the defect frequency will be shifted to higher frequency as the temperature increases. With the inherent loss in InSb, the strength of defect mode will be strongly depressed at a higher temperature. We use the condition of impedance match to explain the presence of defect mode. The understanding of properties of defect mode could be of technical use in the terahertz optoelectronic applications.

Original languageEnglish
Article number093110
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 2011 Nov 1

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal'. Together they form a unique fingerprint.

Cite this