Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal

Hui Chuan Hung, Chien Jang Wu, Shoou Jinn Chang

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

In this work, terahertz (THz) temperature-dependent properties of defect mode in a defective semiconductor-dielectric photonic crystal (SDPC) are theoretically investigated based on the calculated transmittance spectrum. Two different defective PCs, the symmetric structure of (Si/SiO2) NInSb(SiO2/Si)N and the asymmetric one of (Si/SiO2)NInSb(Si/SiO2)N, will be considered. With a strongly temperature-dependent permittivity in defect layer InSb, the defect mode can be thermally tuned, that is, the defect frequency will be shifted to higher frequency as the temperature increases. With the inherent loss in InSb, the strength of defect mode will be strongly depressed at a higher temperature. We use the condition of impedance match to explain the presence of defect mode. The understanding of properties of defect mode could be of technical use in the terahertz optoelectronic applications.

Original languageEnglish
Article number093110
JournalJournal of Applied Physics
Volume110
Issue number9
DOIs
Publication statusPublished - 2011 Nov 1

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photonics
defects
crystals
temperature
transmittance
impedance
permittivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal. / Hung, Hui Chuan; Wu, Chien Jang; Chang, Shoou Jinn.

In: Journal of Applied Physics, Vol. 110, No. 9, 093110, 01.11.2011.

Research output: Contribution to journalArticle

@article{45b42edbb9f245f099cda176cf974d8c,
title = "Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal",
abstract = "In this work, terahertz (THz) temperature-dependent properties of defect mode in a defective semiconductor-dielectric photonic crystal (SDPC) are theoretically investigated based on the calculated transmittance spectrum. Two different defective PCs, the symmetric structure of (Si/SiO2) NInSb(SiO2/Si)N and the asymmetric one of (Si/SiO2)NInSb(Si/SiO2)N, will be considered. With a strongly temperature-dependent permittivity in defect layer InSb, the defect mode can be thermally tuned, that is, the defect frequency will be shifted to higher frequency as the temperature increases. With the inherent loss in InSb, the strength of defect mode will be strongly depressed at a higher temperature. We use the condition of impedance match to explain the presence of defect mode. The understanding of properties of defect mode could be of technical use in the terahertz optoelectronic applications.",
author = "Hung, {Hui Chuan} and Wu, {Chien Jang} and Chang, {Shoou Jinn}",
year = "2011",
month = "11",
day = "1",
doi = "10.1063/1.3660230",
language = "English",
volume = "110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal

AU - Hung, Hui Chuan

AU - Wu, Chien Jang

AU - Chang, Shoou Jinn

PY - 2011/11/1

Y1 - 2011/11/1

N2 - In this work, terahertz (THz) temperature-dependent properties of defect mode in a defective semiconductor-dielectric photonic crystal (SDPC) are theoretically investigated based on the calculated transmittance spectrum. Two different defective PCs, the symmetric structure of (Si/SiO2) NInSb(SiO2/Si)N and the asymmetric one of (Si/SiO2)NInSb(Si/SiO2)N, will be considered. With a strongly temperature-dependent permittivity in defect layer InSb, the defect mode can be thermally tuned, that is, the defect frequency will be shifted to higher frequency as the temperature increases. With the inherent loss in InSb, the strength of defect mode will be strongly depressed at a higher temperature. We use the condition of impedance match to explain the presence of defect mode. The understanding of properties of defect mode could be of technical use in the terahertz optoelectronic applications.

AB - In this work, terahertz (THz) temperature-dependent properties of defect mode in a defective semiconductor-dielectric photonic crystal (SDPC) are theoretically investigated based on the calculated transmittance spectrum. Two different defective PCs, the symmetric structure of (Si/SiO2) NInSb(SiO2/Si)N and the asymmetric one of (Si/SiO2)NInSb(Si/SiO2)N, will be considered. With a strongly temperature-dependent permittivity in defect layer InSb, the defect mode can be thermally tuned, that is, the defect frequency will be shifted to higher frequency as the temperature increases. With the inherent loss in InSb, the strength of defect mode will be strongly depressed at a higher temperature. We use the condition of impedance match to explain the presence of defect mode. The understanding of properties of defect mode could be of technical use in the terahertz optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=81355163383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81355163383&partnerID=8YFLogxK

U2 - 10.1063/1.3660230

DO - 10.1063/1.3660230

M3 - Article

AN - SCOPUS:81355163383

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 093110

ER -