Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application

Hsiu Fung Cheng; Yi Chun Chen; Hsiang Lin Liu; Luu Gen Hwa; I. Nan Lin; Petr Kužel; Jan Petzelt

doi:10.1080/713716247

Terahertz and infrared spectroscopic study on dielectric properties of Bi₂(Zn_1/3Nb_2/3)₂O₇ for microwave application

Hsiu Fung Cheng^*, Yi Chun Chen, Hsiang Lin Liu, Luu Gen Hwa, I. Nan Lin, Petr Kužel, Jan Petzelt

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm^-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm^-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

Original language	English
Pages (from-to)	255-260
Number of pages	6
Journal	Ferroelectrics
Volume	272
DOIs	https://doi.org/10.1080/713716247
Publication status	Published - 2002 Jan 1

Keywords

Dielectric properties
FTIR and THz
Microwave ceramics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/713716247

Cite this

@article{2759819ab9014f8baa5739110cd60006,

title = "Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application",

abstract = "Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.",

keywords = "Dielectric properties, FTIR and THz, Microwave ceramics",

author = "Cheng, {Hsiu Fung} and Chen, {Yi Chun} and Liu, {Hsiang Lin} and Hwa, {Luu Gen} and Lin, {I. Nan} and Petr Ku{\v z}el and Jan Petzelt",

year = "2002",

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doi = "10.1080/713716247",

language = "English",

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T1 - Terahertz and infrared spectroscopic study on dielectric properties of Bi2(Zn1/3Nb2/3)2O7 for microwave application

AU - Cheng, Hsiu Fung

AU - Chen, Yi Chun

AU - Liu, Hsiang Lin

AU - Hwa, Luu Gen

AU - Lin, I. Nan

AU - Kužel, Petr

AU - Petzelt, Jan

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

AB - Dielectric properties of Bi 2 (Zn 1/3 NB 2/3 ) 2 O 7 (BiZN) ceramic materials have been studied using terahertz (THz) and Fourier transform infrared (FTIR) spectroscopies. Real part of dielectric constant ( ε1 ) characterized by FTIR spectroscopy is around ( ε1 ) IR ≅ 60 in low frequency regime ( f <100 cm-1 ) and decreases dramatically in the vicinity of lattice vibrational resonance frequencies or wavenumbers, approaching ( ε1 ) IR≅204 in high frequency regimes ( f > 1000 cm-1 ). Real part of dielectric constant ( ε1 ) characterized by THz spectroscopy is a constant value in 0.100.8 THz regime, ( ε1 ) THz≅68, which is essentially the same as the ε1 value obtained by conventional Hakki-Coleman microwave method. These results reveal that there is no lattice vibrational resonance occurring between THz and microwave (or millimeter wave) frequency regimes. Our results indicate that the low frequency dielectric response of BiZN microwave materials is mainly contributed by the ionic polarization.

KW - Dielectric properties

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