Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

Hsiao Hsuan Hsu; Chun Hu Cheng; Ping Chiou; Yu Chien Chiu; Shiang Shiou Yen; Chien Hung Tung; Chun Yen Chang

doi:10.1109/JDT.2014.2355876

Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

Hsiao Hsuan Hsu, Chun Hu Cheng^*, Ping Chiou, Yu Chien Chiu, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO₂ and IGZO/TiO_x channel stack. According to our experimental results, the IGZO TFT with a thin TiO_x channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm²/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiO_x capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiO_x TFT, indicating a weak Fermi-level pinning in IGZO/TiO_x channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

Original language	English
Article number	6894152
Pages (from-to)	512-517
Number of pages	6
Journal	IEEE/OSA Journal of Display Technology
Volume	11
Issue number	6
DOIs	https://doi.org/10.1109/JDT.2014.2355876
Publication status	Published - 2015 Jun 1

Keywords

Indium-gallium-zinc oxide (IGZO)
thin-film transistor (TFT)
titanium oxide (TiO<inf>x</inf>)
zirconium oxide (ZrO<inf>2</inf>)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2014.2355876

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title = "Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers",

abstract = "This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm2/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.",

keywords = "Indium-gallium-zinc oxide (IGZO), thin-film transistor (TFT), titanium oxide (TiO<inf>x</inf>), zirconium oxide (ZrO<inf>2</inf>)",

author = "Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Ping Chiou and Chiu, {Yu Chien} and Yen, {Shiang Shiou} and Tung, {Chien Hung} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/JDT.2014.2355876",

language = "English",

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T1 - Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chiou, Ping

AU - Chiu, Yu Chien

AU - Yen, Shiang Shiou

AU - Tung, Chien Hung

AU - Chang, Chun Yen

PY - 2015/6/1

Y1 - 2015/6/1

N2 - This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm2/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

AB - This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm2/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

KW - Indium-gallium-zinc oxide (IGZO)

KW - thin-film transistor (TFT)

KW - titanium oxide (TiO<inf>x</inf>)

KW - zirconium oxide (ZrO<inf>2</inf>)

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Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

Abstract

Keywords

ASJC Scopus subject areas

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