Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

Hsiao Hsuan Hsu, Chun Hu Cheng, Ping Chiou, Yu Chien Chiu, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm2/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

Original languageEnglish
Article number6894152
Pages (from-to)512-517
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume11
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

Titanium oxides
titanium oxides
Oxides
metal oxides
Metals
Gate dielectrics
Electric potential
electric potential
Thin film transistors
Fermi level
Threshold voltage
Electric properties
Energy gap
Electric fields
Temperature
temperature
operating temperature
threshold voltage
integrity
low voltage

Keywords

  • Indium-gallium-zinc oxide (IGZO)
  • thin-film transistor (TFT)
  • titanium oxide (TiO<inf>x</inf>)
  • zirconium oxide (ZrO<inf>2</inf>)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers. / Hsu, Hsiao Hsuan; Cheng, Chun Hu; Chiou, Ping; Chiu, Yu Chien; Yen, Shiang Shiou; Tung, Chien Hung; Chang, Chun Yen.

In: IEEE/OSA Journal of Display Technology, Vol. 11, No. 6, 6894152, 01.06.2015, p. 512-517.

Research output: Contribution to journalArticle

Hsu, Hsiao Hsuan ; Cheng, Chun Hu ; Chiou, Ping ; Chiu, Yu Chien ; Yen, Shiang Shiou ; Tung, Chien Hung ; Chang, Chun Yen. / Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers. In: IEEE/OSA Journal of Display Technology. 2015 ; Vol. 11, No. 6. pp. 512-517.
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