Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

Chun Hu Cheng; Wei Ting Chen; Kuan Hsiang Lin; Hsuan Han Chen; Ruo Yin Liao; Ching Chien Huang; Shih Hao Lin; Hsiao Hsuan Hsu

doi:10.1149/2162-8777/ac8954

Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

Chun Hu Cheng
, Wei Ting Chen
, Kuan Hsiang Lin
, Hsuan Han Chen
, Ruo Yin Liao
, Ching Chien Huang
, Shih Hao Lin^*
, Hsiao Hsuan Hsu^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm⁻² (25 °C) to 6.3 μC cm⁻² (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm⁻²) can be held after being fatigued up to 10⁸ endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

Original language	English
Article number	083013
Journal	ECS Journal of Solid State Science and Technology
Volume	11
Issue number	8
DOIs	https://doi.org/10.1149/2162-8777/ac8954
Publication status	Published - 2022 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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@article{4bfb885fe1074190bd5fa331dcaacb68,

title = "Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film",

abstract = "In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3\%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30\% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.",

author = "Cheng, \{Chun Hu\} and Chen, \{Wei Ting\} and Lin, \{Kuan Hsiang\} and Chen, \{Hsuan Han\} and Liao, \{Ruo Yin\} and Huang, \{Ching Chien\} and Lin, \{Shih Hao\} and Hsu, \{Hsiao Hsuan\}",

note = "Publisher Copyright: {\textcopyright} 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

year = "2022",

month = aug,

doi = "10.1149/2162-8777/ac8954",

language = "English",

volume = "11",

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AU - Cheng, Chun Hu

AU - Chen, Wei Ting

AU - Lin, Kuan Hsiang

AU - Chen, Hsuan Han

AU - Liao, Ruo Yin

AU - Huang, Ching Chien

AU - Lin, Shih Hao

AU - Hsu, Hsiao Hsuan

PY - 2022/8

Y1 - 2022/8

N2 - In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

AB - In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

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Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

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