Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

Chun Hu Cheng; Wei Ting Chen; Kuan Hsiang Lin; Hsuan Han Chen; Ruo Yin Liao; Ching Chien Huang; Shih Hao Lin; Hsiao Hsuan Hsu

doi:10.1149/2162-8777/ac8954

Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

Chun Hu Cheng, Wei Ting Chen, Kuan Hsiang Lin, Hsuan Han Chen, Ruo Yin Liao, Ching Chien Huang, Shih Hao Lin^*, Hsiao Hsuan Hsu^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm⁻² (25 °C) to 6.3 μC cm⁻² (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm⁻²) can be held after being fatigued up to 10⁸ endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

Original language	English
Article number	083013
Journal	ECS Journal of Solid State Science and Technology
Volume	11
Issue number	8
DOIs	https://doi.org/10.1149/2162-8777/ac8954
Publication status	Published - 2022 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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@article{4bfb885fe1074190bd5fa331dcaacb68,

title = "Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film",

abstract = "In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.",

author = "Cheng, {Chun Hu} and Chen, {Wei Ting} and Lin, {Kuan Hsiang} and Chen, {Hsuan Han} and Liao, {Ruo Yin} and Huang, {Ching Chien} and Lin, {Shih Hao} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

year = "2022",

month = aug,

doi = "10.1149/2162-8777/ac8954",

language = "English",

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AU - Cheng, Chun Hu

AU - Chen, Wei Ting

AU - Lin, Kuan Hsiang

AU - Chen, Hsuan Han

AU - Liao, Ruo Yin

AU - Huang, Ching Chien

AU - Lin, Shih Hao

AU - Hsu, Hsiao Hsuan

PY - 2022/8

Y1 - 2022/8

N2 - In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

AB - In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

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Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

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