Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan; Cheng Li Lin; Chuan Hsi Liu; Chun Heng Chen; Yin Ku Chang; Ling Yen Yeh

doi:10.1016/j.tsf.2013.05.087

Temperature-dependent current conduction of metal-ferroelectric (BiFeO ₃)-insulator (ZrO₂)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan^*, Cheng Li Lin, Chuan Hsi Liu, Chun Heng Chen, Yin Ku Chang, Ling Yen Yeh

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Metal-ferroelectric-insulator-semiconductor structures with BiFeO ₃ as the ferroelectric layer and zirconium oxide ZrO₂ as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O₂) ratio. The sizes of memory window as functions of Ar/O₂ ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

Original language	English
Pages (from-to)	360-364
Number of pages	5
Journal	Thin Solid Films
Volume	539
DOIs	https://doi.org/10.1016/j.tsf.2013.05.087
Publication status	Published - 2013 Jul 31

Keywords

Bismuth ferrite
Conduction mechanism
Memory window
Metal-ferroelectric-insulator-semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2013.05.087

Cite this

@article{0cad0cfe4d60451a8e0e8e98c72ac4d1,

title = "Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications",

abstract = "Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.",

keywords = "Bismuth ferrite, Conduction mechanism, Memory window, Metal-ferroelectric-insulator-semiconductor",

author = "Juan, {Pi Chun} and Lin, {Cheng Li} and Liu, {Chuan Hsi} and Chen, {Chun Heng} and Chang, {Yin Ku} and Yeh, {Ling Yen}",

note = "Funding Information: The authors wish to thank the National Science Council of Taiwan, Republic of China for supporting this work under Grants No. NSC 99-2221-E-131-022-MY2 .",

year = "2013",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2013.05.087",

language = "English",

volume = "539",

pages = "360--364",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

AU - Juan, Pi Chun

AU - Lin, Cheng Li

AU - Liu, Chuan Hsi

AU - Chen, Chun Heng

AU - Chang, Yin Ku

AU - Yeh, Ling Yen

N1 - Funding Information: The authors wish to thank the National Science Council of Taiwan, Republic of China for supporting this work under Grants No. NSC 99-2221-E-131-022-MY2 .

PY - 2013/7/31

Y1 - 2013/7/31

N2 - Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

AB - Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

KW - Bismuth ferrite

KW - Conduction mechanism

KW - Memory window

KW - Metal-ferroelectric-insulator-semiconductor

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