Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan, Cheng Li Lin, Chuan-Hsi Liu, Chun Heng Chen, Yin Ku Chang, Ling Yen Yeh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

Original languageEnglish
Pages (from-to)360-364
Number of pages5
JournalThin Solid Films
Volume539
DOIs
Publication statusPublished - 2013 Jul 31

Fingerprint

Silicon
Ferroelectric materials
capacitors
Capacitors
Metals
insulators
Data storage equipment
conduction
Argon
silicon
Zirconia
Magnetron sputtering
metals
Surface roughness
Semiconductor materials
Oxygen
Plasmas
zirconium oxides
Temperature
temperature

Keywords

  • Bismuth ferrite
  • Conduction mechanism
  • Memory window
  • Metal-ferroelectric-insulator-semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications. / Juan, Pi Chun; Lin, Cheng Li; Liu, Chuan-Hsi; Chen, Chun Heng; Chang, Yin Ku; Yeh, Ling Yen.

In: Thin Solid Films, Vol. 539, 31.07.2013, p. 360-364.

Research output: Contribution to journalArticle

Juan, Pi Chun ; Lin, Cheng Li ; Liu, Chuan-Hsi ; Chen, Chun Heng ; Chang, Yin Ku ; Yeh, Ling Yen. / Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications. In: Thin Solid Films. 2013 ; Vol. 539. pp. 360-364.
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AU - Chang, Yin Ku

AU - Yeh, Ling Yen

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