Abstract
Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.
| Original language | English |
|---|---|
| Pages (from-to) | 7-15 |
| Number of pages | 9 |
| Journal | Thin Solid Films |
| Volume | 148 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1987 Mar 30 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Temperature dependence of transport properties of evaporated indium tin oxide films. / Huang, K. F.; Uen, T. M.; Gou, Y. S.; Huang, C. R.; Yang, Hong-Chang.
In: Thin Solid Films, Vol. 148, No. 1, 30.03.1987, p. 7-15.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Temperature dependence of transport properties of evaporated indium tin oxide films
AU - Huang, K. F.
AU - Uen, T. M.
AU - Gou, Y. S.
AU - Huang, C. R.
AU - Yang, Hong-Chang
PY - 1987/3/30
Y1 - 1987/3/30
N2 - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.
AB - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.
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U2 - 10.1016/0040-6090(87)90116-7
DO - 10.1016/0040-6090(87)90116-7
M3 - Article
AN - SCOPUS:0023310847
VL - 148
SP - 7
EP - 15
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -