Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang; T. M. Uen; Y. S. Gou; C. R. Huang; H. C. Yang

doi:10.1016/0040-6090(87)90116-7

Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang, T. M. Uen, Y. S. Gou, C. R. Huang, H. C. Yang

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In₂O₃ powder. At room temperature the films have high carrier mobilities of about 60 cm² V^-1 s^-1. Conductivities as high as 5 × 10³ Ω^-1 cm^-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10^-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

Original language	English
Pages (from-to)	7-15
Number of pages	9
Journal	Thin Solid Films
Volume	148
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(87)90116-7
Publication status	Published - 1987 Mar 30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Temperature dependence of transport properties of evaporated indium tin oxide films",

abstract = "Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. M{\"o}ssbauer spectroscopy showed that the tin in all the high quality films was tetravalent.",

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AU - Huang, K. F.

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Huang, C. R.

AU - Yang, H. C.

PY - 1987/3/30

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N2 - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

AB - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

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