Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang, T. M. Uen, Y. S. Gou, C. R. Huang, Hong-Chang Yang

    Research output: Contribution to journalArticle

    41 Citations (Scopus)

    Abstract

    Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

    Original languageEnglish
    Pages (from-to)7-15
    Number of pages9
    JournalThin Solid Films
    Volume148
    Issue number1
    DOIs
    Publication statusPublished - 1987 Mar 30

    Fingerprint

    Tin oxides
    indium oxides
    Transport properties
    Indium
    tin oxides
    Oxide films
    oxide films
    transport properties
    carrier mobility
    conductivity
    temperature dependence
    tin
    Tin
    Carrier mobility
    Temperature
    indium
    transmittance
    temperature
    Excitation energy
    room temperature

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

    Cite this

    Temperature dependence of transport properties of evaporated indium tin oxide films. / Huang, K. F.; Uen, T. M.; Gou, Y. S.; Huang, C. R.; Yang, Hong-Chang.

    In: Thin Solid Films, Vol. 148, No. 1, 30.03.1987, p. 7-15.

    Research output: Contribution to journalArticle

    Huang, K. F. ; Uen, T. M. ; Gou, Y. S. ; Huang, C. R. ; Yang, Hong-Chang. / Temperature dependence of transport properties of evaporated indium tin oxide films. In: Thin Solid Films. 1987 ; Vol. 148, No. 1. pp. 7-15.
    @article{536c676a9bb84349ac72013f1acbd475,
    title = "Temperature dependence of transport properties of evaporated indium tin oxide films",
    abstract = "Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90{\%} in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. M{\"o}ssbauer spectroscopy showed that the tin in all the high quality films was tetravalent.",
    author = "Huang, {K. F.} and Uen, {T. M.} and Gou, {Y. S.} and Huang, {C. R.} and Hong-Chang Yang",
    year = "1987",
    month = "3",
    day = "30",
    doi = "10.1016/0040-6090(87)90116-7",
    language = "English",
    volume = "148",
    pages = "7--15",
    journal = "Thin Solid Films",
    issn = "0040-6090",
    publisher = "Elsevier",
    number = "1",

    }

    TY - JOUR

    T1 - Temperature dependence of transport properties of evaporated indium tin oxide films

    AU - Huang, K. F.

    AU - Uen, T. M.

    AU - Gou, Y. S.

    AU - Huang, C. R.

    AU - Yang, Hong-Chang

    PY - 1987/3/30

    Y1 - 1987/3/30

    N2 - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

    AB - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

    UR - http://www.scopus.com/inward/record.url?scp=0023310847&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0023310847&partnerID=8YFLogxK

    U2 - 10.1016/0040-6090(87)90116-7

    DO - 10.1016/0040-6090(87)90116-7

    M3 - Article

    AN - SCOPUS:0023310847

    VL - 148

    SP - 7

    EP - 15

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

    IS - 1

    ER -