Temperature dependence of the excess noise of a GaN nanowire device

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, C. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages180-183
Number of pages4
DOIs
Publication statusPublished - 2007
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 2007 Sept 92007 Sept 14

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Noise and Fluctuations, ICNF2007
Country/TerritoryJapan
CityTokyo
Period2007/09/092007/09/14

Keywords

  • GaN nanowire
  • electric fluctuation
  • low-frequency excess noise
  • noise
  • semiconductor

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • General Physics and Astronomy
  • Nature and Landscape Conservation

Fingerprint

Dive into the research topics of 'Temperature dependence of the excess noise of a GaN nanowire device'. Together they form a unique fingerprint.

Cite this