@inproceedings{b77ad25e4cf44eefabb2146b2882f2b8,
title = "Temperature dependence of the excess noise of a GaN nanowire device",
abstract = "We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.",
keywords = "electric fluctuation, GaN nanowire, low-frequency excess noise, noise, semiconductor",
author = "Li, {L. C.} and Huang, {S. Y.} and Wei, {J. A.} and Suen, {Y. W.} and Lee, {M. W.} and Hsieh, {W. H.} and Liu, {T. W.} and Chen, {C. C.}",
year = "2007",
doi = "10.1063/1.2759662",
language = "English",
isbn = "9780735404328",
series = "AIP Conference Proceedings",
pages = "180--183",
booktitle = "Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007",
note = "19th International Conference on Noise and Fluctuations, ICNF2007 ; Conference date: 09-09-2007 Through 14-09-2007",
}