Temperature dependence of the excess noise of a GaN nanowire device

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, Chia Chun Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages180-183
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 2007 Sep 92007 Sep 14

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Noise and Fluctuations, ICNF2007
CountryJapan
CityTokyo
Period07/9/907/9/14

Fingerprint

nanowires
temperature dependence
background noise
trapping
activation energy
low frequencies
temperature
room temperature

Keywords

  • GaN nanowire
  • electric fluctuation
  • low-frequency excess noise
  • noise
  • semiconductor

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

Cite this

Li, L. C., Huang, S. Y., Wei, J. A., Suen, Y. W., Lee, M. W., Hsieh, W. H., ... Chen, C. C. (2007). Temperature dependence of the excess noise of a GaN nanowire device. In Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007 (pp. 180-183). (AIP Conference Proceedings; Vol. 922). https://doi.org/10.1063/1.2759662

Temperature dependence of the excess noise of a GaN nanowire device. / Li, L. C.; Huang, S. Y.; Wei, J. A.; Suen, Y. W.; Lee, M. W.; Hsieh, W. H.; Liu, T. W.; Chen, Chia Chun.

Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007. 2007. p. 180-183 (AIP Conference Proceedings; Vol. 922).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, LC, Huang, SY, Wei, JA, Suen, YW, Lee, MW, Hsieh, WH, Liu, TW & Chen, CC 2007, Temperature dependence of the excess noise of a GaN nanowire device. in Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007. AIP Conference Proceedings, vol. 922, pp. 180-183, 19th International Conference on Noise and Fluctuations, ICNF2007, Tokyo, Japan, 07/9/9. https://doi.org/10.1063/1.2759662
Li LC, Huang SY, Wei JA, Suen YW, Lee MW, Hsieh WH et al. Temperature dependence of the excess noise of a GaN nanowire device. In Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007. 2007. p. 180-183. (AIP Conference Proceedings). https://doi.org/10.1063/1.2759662
Li, L. C. ; Huang, S. Y. ; Wei, J. A. ; Suen, Y. W. ; Lee, M. W. ; Hsieh, W. H. ; Liu, T. W. ; Chen, Chia Chun. / Temperature dependence of the excess noise of a GaN nanowire device. Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007. 2007. pp. 180-183 (AIP Conference Proceedings).
@inproceedings{abf222028e3d466093d5518a91bb5a01,
title = "Temperature dependence of the excess noise of a GaN nanowire device",
abstract = "We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.",
keywords = "GaN nanowire, electric fluctuation, low-frequency excess noise, noise, semiconductor",
author = "Li, {L. C.} and Huang, {S. Y.} and Wei, {J. A.} and Suen, {Y. W.} and Lee, {M. W.} and Hsieh, {W. H.} and Liu, {T. W.} and Chen, {Chia Chun}",
year = "2007",
month = "12",
day = "1",
doi = "10.1063/1.2759662",
language = "English",
isbn = "9780735404328",
series = "AIP Conference Proceedings",
pages = "180--183",
booktitle = "Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007",

}

TY - GEN

T1 - Temperature dependence of the excess noise of a GaN nanowire device

AU - Li, L. C.

AU - Huang, S. Y.

AU - Wei, J. A.

AU - Suen, Y. W.

AU - Lee, M. W.

AU - Hsieh, W. H.

AU - Liu, T. W.

AU - Chen, Chia Chun

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.

AB - We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.

KW - GaN nanowire

KW - electric fluctuation

KW - low-frequency excess noise

KW - noise

KW - semiconductor

UR - http://www.scopus.com/inward/record.url?scp=67649287009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649287009&partnerID=8YFLogxK

U2 - 10.1063/1.2759662

DO - 10.1063/1.2759662

M3 - Conference contribution

AN - SCOPUS:67649287009

SN - 9780735404328

T3 - AIP Conference Proceedings

SP - 180

EP - 183

BT - Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007

ER -