INIS
accumulation
50%
activation energy
50%
electroluminescence
100%
electron-hole plasma
100%
emission
100%
emission spectra
50%
equations
50%
light emitting diodes
50%
line widths
50%
low temperature
50%
metals
100%
performance
50%
phonons
50%
photoluminescence
50%
reduction
50%
silicon oxides
100%
spectra
50%
temperature dependence
100%
temperature range 0273-0400 k
100%
tunnel diodes
100%
tunneling
50%
values
50%
voltage
50%
Physics
Accumulations
33%
Activation Energy
33%
Diode
100%
Electric Potential
33%
Electroluminescence
100%
Emission
33%
Emission Spectra
33%
Gaps
66%
Holes (Electron Deficiencies)
100%
Light Emission
33%
Light Emitting Diode
33%
Linewidth
33%
Metal
100%
Model
33%
Performance
33%
Photoluminescence
33%
Region
33%
Room Temperature
66%
Silicon Oxide
100%
Spectra
33%
Temperature
100%
Temperature Dependence
100%
Value
33%
Material Science
Diode
100%
Electroluminescence
100%
Light-Emitting Diode
16%
Metal Oxide
100%
Photoluminescence
16%
Silicon
100%
Temperature
100%