Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes

C. W. Liu, Miin Jang Chen, I. C. Lin, M. H. Lee, Ching Fuh Lin

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The temperature performance of metal-oxide-silicon tunneling light-emitting diodes was studied. An electron-hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature.

Original languageEnglish
Pages (from-to)1111-1113
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number8
DOIs
Publication statusPublished - 2000 Aug 21

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electroluminescence
metal oxides
diodes
temperature dependence
silicon
room temperature
light emission
emission spectra
phonons
light emitting diodes
activation energy
photoluminescence
temperature
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes. / Liu, C. W.; Chen, Miin Jang; Lin, I. C.; Lee, M. H.; Lin, Ching Fuh.

In: Applied Physics Letters, Vol. 77, No. 8, 21.08.2000, p. 1111-1113.

Research output: Contribution to journalArticle

Liu, C. W. ; Chen, Miin Jang ; Lin, I. C. ; Lee, M. H. ; Lin, Ching Fuh. / Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes. In: Applied Physics Letters. 2000 ; Vol. 77, No. 8. pp. 1111-1113.
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