Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes

C. W. Liu, Miin Jang Chen, I. C. Lin, M. H. Lee, Ching Fuh Lin

    Research output: Contribution to journalArticle

    33 Citations (Scopus)

    Abstract

    The temperature performance of metal-oxide-silicon tunneling light-emitting diodes was studied. An electron-hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature.

    Original languageEnglish
    Pages (from-to)1111-1113
    Number of pages3
    JournalApplied Physics Letters
    Volume77
    Issue number8
    DOIs
    Publication statusPublished - 2000 Aug 21

    Fingerprint

    electroluminescence
    metal oxides
    diodes
    temperature dependence
    silicon
    room temperature
    light emission
    emission spectra
    phonons
    light emitting diodes
    activation energy
    photoluminescence
    temperature
    electric potential

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes. / Liu, C. W.; Chen, Miin Jang; Lin, I. C.; Lee, M. H.; Lin, Ching Fuh.

    In: Applied Physics Letters, Vol. 77, No. 8, 21.08.2000, p. 1111-1113.

    Research output: Contribution to journalArticle

    Liu, C. W. ; Chen, Miin Jang ; Lin, I. C. ; Lee, M. H. ; Lin, Ching Fuh. / Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes. In: Applied Physics Letters. 2000 ; Vol. 77, No. 8. pp. 1111-1113.
    @article{7355323dd1264989b6497154777d9b94,
    title = "Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes",
    abstract = "The temperature performance of metal-oxide-silicon tunneling light-emitting diodes was studied. An electron-hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature.",
    author = "Liu, {C. W.} and Chen, {Miin Jang} and Lin, {I. C.} and Lee, {M. H.} and Lin, {Ching Fuh}",
    year = "2000",
    month = "8",
    day = "21",
    doi = "10.1063/1.1289491",
    language = "English",
    volume = "77",
    pages = "1111--1113",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "8",

    }

    TY - JOUR

    T1 - Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes

    AU - Liu, C. W.

    AU - Chen, Miin Jang

    AU - Lin, I. C.

    AU - Lee, M. H.

    AU - Lin, Ching Fuh

    PY - 2000/8/21

    Y1 - 2000/8/21

    N2 - The temperature performance of metal-oxide-silicon tunneling light-emitting diodes was studied. An electron-hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature.

    AB - The temperature performance of metal-oxide-silicon tunneling light-emitting diodes was studied. An electron-hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature.

    UR - http://www.scopus.com/inward/record.url?scp=0000720021&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000720021&partnerID=8YFLogxK

    U2 - 10.1063/1.1289491

    DO - 10.1063/1.1289491

    M3 - Article

    AN - SCOPUS:0000720021

    VL - 77

    SP - 1111

    EP - 1113

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 8

    ER -