Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim; Julian J. Sanchez; Thomas A. DeMassa; Mohammed T. Quddus; Robert O. Grondin; Chuan H. Liu

doi:10.1016/S0038-1101(98)00196-8

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim^*, Julian J. Sanchez, Thomas A. DeMassa, Mohammed T. Quddus, Robert O. Grondin, Chuan H. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

Original language	English
Pages (from-to)	57-63
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(98)00196-8
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(98)00196-8

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title = "Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide",

abstract = "The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.",

author = "Kim, {Jong Hyun} and Sanchez, {Julian J.} and DeMassa, {Thomas A.} and Quddus, {Mohammed T.} and Grondin, {Robert O.} and Liu, {Chuan H.}",

year = "1999",

doi = "10.1016/S0038-1101(98)00196-8",

language = "English",

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pages = "57--63",

journal = "Solid-State Electronics",

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T1 - Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

AU - Kim, Jong Hyun

AU - Sanchez, Julian J.

AU - DeMassa, Thomas A.

AU - Quddus, Mohammed T.

AU - Grondin, Robert O.

AU - Liu, Chuan H.

PY - 1999

Y1 - 1999

N2 - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

AB - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

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UR - http://www.scopus.com/inward/citedby.url?scp=8444224965&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00196-8

DO - 10.1016/S0038-1101(98)00196-8

M3 - Article

AN - SCOPUS:8444224965

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VL - 43

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EP - 63

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Abstract

ASJC Scopus subject areas

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